MPS2222 transistor (npn) feature power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm : 0.6 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 10a, i e =0 60 v collector-emitter breakdown voltage v(br) ceo i c = 10ma , i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 10a, i c =0 5 v collector cut-off current i cbo v cb = 50v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a h fe(1) v ce =10v, i c = 150ma 100 300 dc current gain h fe(2) v ce =10v, i c = 1ma 60 collector-emitter saturation voltage v ce(sat) i c = 500ma, i b = 50 ma 1 v base-emitter saturation voltage v be(sat) i c = 500ma, i b = 50 ma 2 v transition frequency f t v ce = 20v, i c = 20ma f = 100mhz 300 mhz classification of h fe(1) rank l h range 100-200 200-300 1 2 3 to-92 1. emitter 2. base 3. collector MPS2222 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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